Method of manufacturing stacked semiconductor device

Details Method of manufacturing stacked semiconductor device Method of manufacturing stacked semiconductor device

2005-02-08

2005-02-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S109000, C438S112000, C438S124000, C438S612000, C438S617000

Reexamination Certificate

active

06852571

ABSTRACT:
Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.

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