Method of manufacturing stacked semiconductor device

Details Method of manufacturing stacked semiconductor device Method of manufacturing stacked semiconductor device

2011-06-07

2011-06-07

Tran, Tan N (Department: 2826)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S123000, C438S118000, C257SE21509, C257SE21499

Reexamination Certificate

active

07955896

ABSTRACT:
A first semiconductor element is mounted on a wiring board. A second semiconductor element having a portion projecting to an outer side of an outer periphery of the first semiconductor element is disposed on the first semiconductor element via an adhesive. The adhesive has a viscosity (μ0.5 rpm) at a low-rotation speed in a range from 10 Pa·s to 150 Pa·s and a thixotropic ratio of 2 or higher expressed by a ratio (μ0.5 rpm/μ5 rpm) of the viscosity (μ0.5 rpm) at the low-rotation speed to a viscosity (μ5 rpm) at a high-rotation speed. The second semiconductor element is bonded onto the first semiconductor element while the adhesive is filled in a hollow portion between the projecting portion of the second semiconductor element and the wiring board.

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JIS K7244-4, Plastics Determination of Dynamic Mechanical Properties Part 4: Tensile Vibration—Non-resonance Method, Oct. 20, 1999.
JIS K7117-2, Liquid, Emulsion-like or Dispersed Resin—Viscosity Measuring Method (Room-Temperature Measurement) by a Rotational Viscometer at a Fixed Shearing Speed, Aug. 20, 1999.

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