Method of manufacturing stable, low resistance contacts in integ

Details Method of manufacturing stable, low resistance contacts in integ Method of manufacturing stable, low resistance contacts in integ

1984-03-22

1986-01-07

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29590, 29589, 148DIG19, H01L 21285

Patent

active

045626405

ABSTRACT:
A method of manufacturing stable, low resistance contacts in an integrated semiconductor circuit which involves providing highly doped impurity diffused regions in a silicon substrate, forming a silicon dioxide layer over the highly doped diffused regions and the surrounding substrate, forming contact holes of uniform size in the silicon dioxide layer in selected areas of the highly doped diffused regions, applying a layer including a metal silicide into the holes in contact with the underlying highly doped diffused regions, applying an n.sup.+ -doped polysilicon layer into the contact holes and over the silicon dioxide layer with a thickness corresponding to about half the contact hole side length, and then depositing a layer of predominantly aluminum over the n.sup.+ -doped polysilicon layer.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4187599 (1980-02-01), Flowers et al.
patent: 4206472 (1980-06-01), Chu et al.
patent: 4233337 (1980-11-01), Friedmann et al.
patent: 4361599 (1982-11-01), Wourms
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4392150 (1983-07-01), Courreges
patent: 4424578 (1984-01-01), Miyamoto
patent: 4434544 (1984-03-01), Dohya et al.
Howard, "Gates for MOS Devices: Rare Earth Silicides," IBM Tech. Discl. Bull., vol. 21, No. 7, Dec. '78.
Ning, "Effect of Emmitter Contact on Current Gain of Silicon Bipolar Devices," IEEE Trans. of Electron Dev., vol. ED-27, Nov. 1980.
Sopher et al, "Metal Contacts to Semiconductor Devices", IBM Tech. Discl. Bull., vol. 10, No. 2, Jul. 1967.
IEDM Digest, Dec. 1981, pp. 54 to 57.
The Appl. Phys. Lett., vol. 39, Dec. 1981, pp. 900-902.
IEEE Trans. Elect. Dev., Sep. 1973, p. 840.
J. Electrochem. Soc., Feb. 1981, pp. 423-429.

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