Method of manufacturing spacer

Details Method of manufacturing spacer Method of manufacturing spacer

2007-06-26

2007-06-26

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S706000, C438S303000

Reexamination Certificate

active

10908240

ABSTRACT:
A method of manufacturing a spacer for a substrate having a gate structure formed thereon. The method comprises steps of forming a first oxide layer over the substrate and forming a nitride layer on the first oxide layer. A first asymmetric etching process is performed to remove a portion of the nitride layer until a portion of a top surface of the first oxide layer is exposed. A second asymmetric etching process is performed to remove a portion of the first oxide layer by using the remaining nitride layer as a mask until about 50% to 90% portion of the first oxide layer is removed. A quick wet etching process is performed to remove a portion of the remaining first oxide located on the top of the gate structure and on the substrate.

REFERENCES:
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patent: 2005/0118770 (2005-06-01), Nandakumar et al.
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patent: 2006/0189065 (2006-08-01), Wang et al.

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