Method of manufacturing solid-state imaging device and...

Details Method of manufacturing solid-state imaging device and... Method of manufacturing solid-state imaging device and...

2009-05-11

2011-12-13

Chiang, Jack (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S069000, C438S057000, C257SE31127, C257SE21001, C257S462000, C257S620000

Reexamination Certificate

active

08076172

ABSTRACT:
A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof. The method includes the steps of: forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and forming an opening in a pad part on the second side where light is incident.

REFERENCES:
patent: 2006/0091398 (2006-05-01), Yamaguchi et al.
patent: 2008/0048280 (2008-02-01), Tsukamoto
patent: 2009/0136174 (2009-05-01), Itahashi
patent: 2009/0242741 (2009-10-01), Konishi
patent: 2010/0187648 (2010-07-01), Hashimoto
patent: 2005-347707 (2005-12-01), None
patent: 2005-353631 (2005-12-01), None

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