Method of manufacturing solid-state image sensor

Details Method of manufacturing solid-state image sensor Method of manufacturing solid-state image sensor

1987-05-20

1988-09-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437100, 437101, 437937, H01L 2714, H01L 3102

Patent

active

047725656

ABSTRACT:
A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.

REFERENCES:
patent: 4348428 (1982-09-01), Rockley et al.
patent: 4544423 (1985-10-01), Tsuge et al.
patent: 4581249 (1986-04-01), Kamiya
patent: 4654226 (1987-03-01), Jackson et al.
Inoue et al., Appl. Phys. Lett. 44 (9), 1 May 1984, pp. 871-873.
IEEE Trans. Electron Devices ED-32,8, p. 1499; N. Harada et al., Aug. 8, 1985.
IEEE Trans. Electron Devices ED-32,8, p. 1495; T. Chikamura et al., Aug. 8, 1985.

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