Method of manufacturing solid state image sensing device

Details Method of manufacturing solid state image sensing device Method of manufacturing solid state image sensing device

1998-07-06

2000-11-07

Smith, Matthew

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 75, 438 60, 348294, 348311, 257229, 257230, H01L 3118, H01L 2170, H01L 2700

Patent

active

061435856

ABSTRACT:
A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p.sup.+ -type semiconductor region and an insulating film with a relatively large thickness formed on the first p.sup.+ -type semiconductor region. The cell area further includes a second p.sup.+ -type semiconductor region and an insulating film with a relatively small thickness formed on the second p.sup.+ -type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.

REFERENCES:
patent: 4914311 (1990-04-01), Kinoshita et al.
patent: 5264374 (1993-11-01), Watanabe et al.
patent: 5385849 (1995-01-01), Nakashiba
patent: 5565373 (1996-10-01), Nakashiba
patent: 5565374 (1996-10-01), Fukusho
patent: 5619049 (1997-04-01), Kim
patent: 6023293 (2000-02-01), Watanabe et al.

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