Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1995-06-07
1996-10-22
Fourson, George
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 902
Patent
active
055672094
ABSTRACT:
The invention provides a method for manufacturing a solid electrolytic capacitor having oxide film of valve action metal as a dielectric substance and conducting polymer as solid electrolyte. The method includes the steps of forming solid monomer compound on a surface of the oxide film by applying monomer compound solution to the surface and then drying the monomer compound solution, and forming a conducting polymer layer by polymerizing the solid monomer compound with an oxidizer. The method provides a capacitor having a quite small impedance in a resonant frequency and also having a superior high frequency characteristic.
REFERENCES:
patent: 4803596 (1989-02-01), Hellwig et al.
patent: 5019949 (1991-05-01), Ikedo et al.
patent: 5140502 (1992-08-01), Kudoh et al.
patent: 5168434 (1992-12-01), Kobayashi
patent: 5187649 (1993-02-01), Kudoh et al.
patent: 5223002 (1993-06-01), Ross
patent: 5227092 (1993-07-01), Han
patent: 5315474 (1994-05-01), Kuriyama
Arai Satoshi
Kobayashi Atsushi
Bilodeau Thomas G.
Fourson George
NEC Corporation
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