Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1998-07-23
2000-08-29
Niebling, John F.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
361523, 361525, H01G 900, H01G 902
Patent
active
061102342
ABSTRACT:
In a method of manufacturing a solid electrolytic capacitor, an oxide film as a dielectric layer is formed on a surface of a sintered body formed from a valve action metal and having an anode lead. A solid electrolytic layer essentially consisting of a conductive polymer is formed on the dielectric layer. In the step of forming the solid electrolytic layer, the sintered body having the dielectric layer is dipped in an oxidant solution, and the oxidant solution on the surface of the extracted sintered body is evaporated. Then, the sintered body is dipped in a monomer solution prepared by dissolving a conductive polymeric monomer in a solution in which the oxidant is not dissolved, and the monomer solution on the surface of the extracted sintered body is evaporated to form the conductive polymer layer.
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Arai Satoshi
Fukaumi Takashi
Nishiyama Toshihiko
Sakata Koji
NEC Corporation
Nguyen Ha Tran
Niebling John F.
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