Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1994-11-03
1995-10-17
Fourson, George
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 9025
Patent
active
054578620
ABSTRACT:
According to a method of manufacturing a solid electrolytic capacitor of the present invention, a surface of an anode consisting of a valve metal and having a lead extending therefrom is oxidized to form a dielectric layer. A chemical oxidation and polymerization process is performed using an oxidant, and a first conductive polymer compound layer is formed on the dielectric layer. An undoped polymer compound layer is formed on the first conductive polymer compound layer using a solution containing a polymer compound polymerized in advance and soluble in an organic solvent, and then proton acid is doped in the undoped polymer compound layer to make the undoped polymer compound layer conductive to form a second conductive polymer compound layer. A cathode electrode is formed on the second conductive polymer compound layer.
REFERENCES:
patent: 4780796 (1988-10-01), Fukuda et al.
Fukami Takashi
Kobayashi Atsushi
Sakata Koji
Bilodeau Thomas G.
Fourson George
NEC Corporation
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