Method of manufacturing SOI substrate

Details Method of manufacturing SOI substrate Method of manufacturing SOI substrate

1997-07-02

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438695, 257347, H01L 21265

Patent

active

059899816

ABSTRACT:
A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

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"Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation", by L.F. Giles et al., Nuclear Instruments and Method in Physics Research B84 (1994) pp. 242-247.

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