Method of manufacturing single-wafer tunneling sensor

Details Method of manufacturing single-wafer tunneling sensor Method of manufacturing single-wafer tunneling sensor

1995-05-31

1997-09-09

Tung, T.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

73105, 216 66, 216 67, 216 74, 216 79, 250306, 250307, 250423F, H01L 21027, H01J 37244

Patent

active

056652534

ABSTRACT:
A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.

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