Method of manufacturing single crystal of silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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117 30, 117917, C30B 1522

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active

058823980

ABSTRACT:
A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.

REFERENCES:
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 5183965 (1993-02-01), Lawless
Fumio Shimura, "Semiconductor Silicon Crystal Technology", pp. 178-181, 1989.
K. Hoshi et al., "CZ Silicon Crystal Grown in Transverse Magnetic Fields", Extended Abstracts, vol. 80-1(1980), pp. 811-813.
E. M. Hull, "Controlling the Oxygen Concentration of Silicon Crystals by Magnetically Induced Melt Rotation", IBM Technical Disclosure Bulletin, vol. 23, No. 7A, Dec. 1980.

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