Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-01-23
1999-03-16
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 30, 117917, C30B 1522
Patent
active
058823980
ABSTRACT:
A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
REFERENCES:
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 5183965 (1993-02-01), Lawless
Fumio Shimura, "Semiconductor Silicon Crystal Technology", pp. 178-181, 1989.
K. Hoshi et al., "CZ Silicon Crystal Grown in Transverse Magnetic Fields", Extended Abstracts, vol. 80-1(1980), pp. 811-813.
E. M. Hull, "Controlling the Oxygen Concentration of Silicon Crystals by Magnetically Induced Melt Rotation", IBM Technical Disclosure Bulletin, vol. 23, No. 7A, Dec. 1980.
Hayashi Toshiro
Iwasaki Atsushi
Ohta Tomohiko
Sonokawa Susumu
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
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