Method of manufacturing silicon wafer

Details Method of manufacturing silicon wafer Method of manufacturing silicon wafer

2008-05-20

2008-05-20

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Repair or restoration

C438S795000, C438S974000, C117S003000, C117S904000, C257SE21134

Reexamination Certificate

active

07374955

ABSTRACT:
The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer.An ingot of a silicon single crystal is grown by way of Czochralski single crystal pulling method, this silicon single crystal ingot is sliced to produce a wafer, then a surface layer of the wafer is annealed for between 0.01 microseconds and 10 seconds (inclusive) by means of a laser spike annealing apparatus such that a temperature of a wafer surface layer part is between 1250° C. and 1400° C. (inclusive).

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