Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1997-04-15
1998-12-01
Nguyen, Ngoc-Yen
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423324, 423565, 423DIG12, C01B 3300, C01B 1700
Patent
active
058433910
ABSTRACT:
Silicon sulfide is manufactured from the fine powder of silicon having a particle size in the range of 60 to 100.mu., covered thoroughly with sulfur at lower temperature less than 700.degree. C. in vacuum. In order to produce the silicon sulfide, silicon should be ground in a non-oxidizing atmosphere to prevent the formation of a silicon oxide layer that remains in the product and degrades the purity of the product. The silicon powder is dispersed sufficiently in the molten sulfur. At this time, the quantity of added sulfur needs more than 1.1 times in comparison with the stoichiometric quantity of silicon sulfide. All surfaces of silicon powder should be covered with sulfur to avoid sintering between silicon particles in the whole process of the reaction.
REFERENCES:
patent: 2589653 (1952-03-01), Alvarez-Tostado et al.
patent: 2766103 (1956-10-01), Nielsen et al.
patent: 3321326 (1967-05-01), Young
patent: 4491639 (1985-01-01), Happel et al.
Emons et al, "Darstellung und Eigenschaften von Fasrigem Siliciummono-Sulfid", Z. Chem. 8(1), pp. 31-32, Jan. 1968.
Chemical Abstract: 65336n "Preparation and properties of fibrous silicon monosulfide", Emons et al, vol. 68, 1968 (no month).
Mellor, "A Comprehensive Treatise on Inorganic and Theoretical Chemistry" vol., VI, QD 31 M4, 1947 (no month), pp. 985-990.
European Search Report dated Jun. 23, 1997 for European Appln. No. EP97105989.
Chemiker Zeitung, vol. 107, No. 10; 1983 Heidelberg DE, pp. 289-290, R.G. Sobott et al. (no month).
"Gmelins Handbuch De Anorganischer Chemie 8.sup.th Completely reworked edition Silicium Part B System-No. 15" 1959 Verlay Chemie, GmbH, p. 747, line 5-line 8. (no month).
Ikeda Nobuhiko
Yamamoto Kazutomi
Furukawa Co., Ltd.
Nguyen Ngoc-Yen
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