Method of manufacturing silicon single crystal, silicon...

Details Method of manufacturing silicon single crystal, silicon... Method of manufacturing silicon single crystal, silicon...

2007-02-20

2007-02-20

Gupta, Yogendra (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S012000, C117S037000, C117S054000, C117S208000

Reexamination Certificate

active

10510695

ABSTRACT:
The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of <110>.

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Nikkei Microdevices; No. 188; Feb. 2001; pp. 64-69; Nikkei BP Inc.

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