Method of manufacturing silicon oxide film containing fluorine

Details Method of manufacturing silicon oxide film containing fluorine Method of manufacturing silicon oxide film containing fluorine

1993-07-16

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437240, 4272481, 4272551, H01L 2102

Patent

active

054299950

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:

REFERENCES:
patent: 5215787 (1993-06-01), Homma
patent: 5288518 (1994-02-01), Homma
Van de Ven et al., 1990 VMIC. Conference, Jun. 12-13 1990, pp. 194-201.
IEEE IEDM, 1991, pp. 289-292, T. Homa, et al., "A Room Temperature CVD Technology for Interlayer in Deep-Submicron Multilevel Interconnection".
Proc. 2nd International ULSI Science and Technology Symp. ECS Proc., 1989, pp. 571-585, D. A. Webb, et al., "Silicon Dioxide Films Produced by PECVD of TEOS and TMCTS".

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