Method of manufacturing silicon monocrystal using continuous czo

Details Method of manufacturing silicon monocrystal using continuous czo Method of manufacturing silicon monocrystal using continuous czo

1997-02-20

1998-03-31

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117 33, 117217, C30B 1502

Patent

active

057333688

ABSTRACT:
In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.

REFERENCES:
patent: 4660149 (1987-04-01), Lissalde et al.
patent: 5462011 (1995-10-01), Tomzig et al.
patent: 5485802 (1996-01-01), Altekruger et al.
patent: 5524571 (1996-06-01), Kawasaki et al.
patent: 5587016 (1996-12-01), Altekruger et al.
patent: 5588993 (1996-12-01), Holder

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