Method of manufacturing silicon monocrystal by continuously char

Details Method of manufacturing silicon monocrystal by continuously char Method of manufacturing silicon monocrystal by continuously char

1997-03-25

1999-05-04

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 18, 117213, 117214, C30B 1502

Patent

active

059000554

ABSTRACT:
A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient. When the dopant concentration ratio becomes smaller than the effective segregation coefficient, the dopant is charged to the silicon melt stored in the outer crucible. The above operation is repeated, so that the specific resistance of the silicon monocrystal pulled from the double crucible can be controlled within a desired range using commonly-employed dopant.

REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 5034200 (1991-07-01), Yamashita et al.
patent: 5073229 (1991-12-01), Yamashita et al.

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