Method of manufacturing silicon integrated circuits utilizing se

Details Method of manufacturing silicon integrated circuits utilizing se Method of manufacturing silicon integrated circuits utilizing se

1976-07-19

1978-05-30

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 148187, 148188, 357 48, 357 54, 357 89, 357 90, H01L 2176, H01L 2120, H01L 21225

Patent

active

040921859

ABSTRACT:
A method of forming buried regions in a printed circuit substrate in which; a first layer of doped silicon oxide is deposited on the substrate, a pattern of apertures is produced in this layer and a second layer of differently doped silicon oxide is deposited to fill in apertures. The first layer silicon dioxide acts as a mask to the doping material so that when the two layers are subjected to a common diffusion step both doping materials are driven into the substrate, with the second layer doping material restricted to the regions of the apertures.

REFERENCES:
patent: 2804405 (1957-08-01), Derick et al.
patent: 3260902 (1966-07-01), Porter
patent: 3287187 (1966-11-01), Rosenheinrich
patent: 3293087 (1966-12-01), Porter
patent: 3327182 (1967-06-01), Kisinko
patent: 3481801 (1969-12-01), Hugle
patent: 3529217 (1970-09-01), Van Santen
patent: 3649387 (1972-03-01), Frentz et al.
patent: 3730787 (1973-05-01), Murphy et al.
patent: 3867204 (1975-02-01), Rutledge
Czorny, B., "Epitaxy-Versatile --- Integrated Circuits" R.C.A. Engineer, vol. 13, No. 3, 10-11, 1967, pp. 28-32.
Ashar et al., "Semiconductor Device Structure and Method of Making" I.B.M. Tech. Discl. Bull., vol. 11, No. 11, Apr. 1969, pp. 1529-1530.

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