Method of manufacturing silicon carbide whisker

Details Method of manufacturing silicon carbide whisker Method of manufacturing silicon carbide whisker

1988-09-15

1989-08-08

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, C01B 3136

Patent

active

048551198

ABSTRACT:
A method for manufacturing a silicon carbide whisker comprising heating a reaction zone to a temperature in the range of 1,000.degree. C. to 1,200.degree.; supplying a reducing or inactive gas and a sulfur-containing organic siloxane compound; thermally decomposing in vapor phase to react silicon and carbon contained in the sulfur-containing organic siloxane compound by a gaseous phase reaction and recovering a silicon carbide whisker, characterized in that the sulfur promotes the reaction between the silicon and the carbon.

REFERENCES:
patent: 4552740 (1985-11-01), Morgan et al.
patent: 4640830 (1987-02-01), Arakawa

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