Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2005-01-25

2008-08-05

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S931000, C257S077000, C257SE21054

Reexamination Certificate

active

07407837

ABSTRACT:
Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from causing, and since the effective electron mass is reduced due to the crystal lattice interval change, the carrier mobility in the SiC crystal is improved, the resistance of the SiC crystal is reduced and, therefore, the on-resistance of the SiC semiconductor device is reduced.

REFERENCES:
patent: 5763905 (1998-06-01), Harris
patent: 8-111528 (1996-04-01), None
patent: 2000-22137 (2000-01-01), None
patent: 2000150875 (2000-05-01), None
patent: 2002-222950 (2002-08-01), None
Roosevelt People, Physics and Application of Ge×Si1-×/Si Strained-Layer Heterostructures, IEEE Journal of Quantum Electronics, Sep. 9, 1986, pp. 1696-1710, vol. QE-22.

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