Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2007-03-27

2007-03-27

Tran, Long (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

C438S571000, C257SE29271, C257SE27068

Reexamination Certificate

active

11199140

ABSTRACT:
A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then the oxide film on regions in which source and drain regions are to be formed is removed by etching. Impurity ions are implanted into an exposed semiconductor layer and heat treatment is performed for activating the implanted impurity ions. A metal film to serve as ohmic electrodes is formed on the entire surface, and then the oxide film is removed by etching to thereby form a source electrode and a drain electrode. Leaving a part of the oxide film on regions on which source and drain electrodes are to be formed can prevent the oxide film from being deformed during the heat treatment for activation.

REFERENCES:
patent: 2005/0205892 (2005-09-01), Yanagihara et al.
patent: 164525/2000 (2000-06-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing silicon carbide semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing silicon carbide semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing silicon carbide semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3726596