Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2011-08-02

2011-08-02

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C257SE21530

Reexamination Certificate

active

07989231

ABSTRACT:
In a method of manufacturing a silicon carbide semiconductor device, a trench and a thickness measurement section are formed in a surface of a semiconductor substrate made of silicon carbide. The thickness measurement section includes a plurality of grooves and a protruding portion provided between the grooves so as to have a predetermined width. When an epitaxial layer made of silicon carbide is grown, a thickness of the epitaxial layer formed on the surface of the semiconductor substrate is measured by calculating a difference in height between a surface of the epitaxial layer formed on a portion of the surface of the semiconductor substrate different from the thickness measurement section and a top surface of the protruding portion. The predetermined width is less than a surface migration amount of atoms during growth of the epitaxial layer.

REFERENCES:
patent: 5744826 (1998-04-01), Takeuchi et al.
patent: 2010/0093116 (2010-04-01), Fronheiser et al.
patent: A-2003-142357 (2003-05-01), None

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