Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2010-12-07

2011-12-27

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

C438S758000, C438S931000

Reexamination Certificate

active

08084278

ABSTRACT:
A wafer WF is mounted in a substrate holder, and the substrate holder is placed in a film forming furnace. The film forming furnace is evacuated by a vacuum pump through a gas discharge part to remove remaining oxygen as completely as possible. Then, a temperature in the film forming furnace is heated to a range of 800° C. to 950° C. under reduced pressure while an inert gas such as Ar or helium (He) is being introduced through a gas introduction part. When the temperature reaches this temperature range, an inflow of the inert gas is stopped. Vaporized ethanol is introduced as a source gas into the film forming furnace through the gas introduction part, thus forming a graphite film on an entire surface of the wafer WF.

REFERENCES:
patent: 5246884 (1993-09-01), Jaso et al.
patent: 7275861 (2007-10-01), Volf et al.
patent: 7449361 (2008-11-01), Baskaran et al.
patent: 7473929 (2009-01-01), Kusumoto et al.
patent: 7695564 (2010-04-01), Micovic et al.
patent: 7820534 (2010-10-01), Sawada et al.
patent: 2006/0220027 (2006-10-01), Takahashi et al.
patent: 2007/0015373 (2007-01-01), Cowen et al.
patent: 2007/0224727 (2007-09-01), Dory
patent: 2009-65112 (2009-03-01), None

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