Method of manufacturing silicon carbide crystals

Details Method of manufacturing silicon carbide crystals Method of manufacturing silicon carbide crystals

1972-08-15

1976-06-08

Vertiz, Oscar R.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C01B 3136

Patent

active

039624064

ABSTRACT:
A method of manufacturing silicon carbide crystals in which a core of silicon dioxide is embedded in a mass of granular silicon carbide, or materials which form silicon carbide on heating this mass being heated to a temperature at which silicon dioxide volatilizes, i.e. above about 1500.degree.C, and the silicon carbide coheres. This leaves a cavity, formerly occupied by the silicon dioxide which is surrounded by silicon carbide. Heating is then continued at a temperature, above about 2500.degree.C, at which silicon carbide crystals are formed on the walls of the cavity.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3275415 (1966-09-01), Chang et al.
patent: 3460987 (1969-07-01), McMillan et al.
patent: 3647384 (1972-03-01), Dessureault
Phillips Research Reports, vol. 18, No. 3, pp. 171-174, (1963).

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