Method of manufacturing silicon carbide

Details Method of manufacturing silicon carbide Method of manufacturing silicon carbide

2006-01-23

2010-10-05

Johnson, Edward M (Department: 1793)

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C423S439000

Reexamination Certificate

active

07807123

ABSTRACT:
A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and one or more kinds of transition metal elements, a mixture containing metal silicon powder and transition metal powder, and a mixture of metal silicon powder and a transition metal compound with (B) one or more kinds of substituted or unsubstituted hydrocarbons selected from the group consisting of a chain saturated hydrocarbon, a chain unsaturated hydrocarbon, a cyclic saturated hydrocarbon, an alcohol, and an aromatic hydrocarbon. The manufacturing method can provide a sufficient conversion ratio from raw materials at low temperatures and powdery silicon carbide having a small particle size and small amounts of impurities.

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patent: 2005/0079119 (2005-04-01), Kawakami et al.
patent: 5-279007 (1993-10-01), None
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