Method of manufacturing Si-Ge thin film transistor

Fishing – trapping – and vermin destroying

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437 21, 437174, 148DIG58, H01L 2184

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active

055916538

ABSTRACT:
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

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