Method of manufacturing sensor with photodiode and charge...

Details Method of manufacturing sensor with photodiode and charge... Method of manufacturing sensor with photodiode and charge...

2007-12-19

2010-06-15

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S144000, C438S439000, C257S225000, C257SE21001, C257SE31001

Reexamination Certificate

active

07736932

ABSTRACT:
A method of manufacturing a photodiode sensor and an associated charge transfer transistor includes forming an insulation region on a substrate, forming the diode on a first side of the insulation region with the diode being self-aligned on the insulation region, and replacing the insulation region by a gate of the charge transfer transistor. The invention has particular utility in the manufacture of CMOS or CCD image sensors.

REFERENCES:
patent: 5439836 (1995-08-01), Giffard
patent: 5489792 (1996-02-01), Hu et al.
patent: 6403998 (2002-06-01), Inoue
patent: 7084443 (2006-08-01), Kitano et al.
patent: 2005/0088556 (2005-04-01), Han
patent: 2006/0124976 (2006-06-01), Adkisson et al.
patent: 2006/0145203 (2006-07-01), Toros et al.
FR Search Report; FR 0611097; Aug. 3, 2007.

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