Method of manufacturing semiconductor wafers

Details Method of manufacturing semiconductor wafers Method of manufacturing semiconductor wafers

1997-03-25

1999-08-24

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, 438706, H01L 21302

Patent

active

059424451

ABSTRACT:
According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.

REFERENCES:
patent: 4390392 (1983-06-01), Robinson et al.
patent: 5700179 (1997-12-01), Hasegawa et al.
patent: 5800725 (1998-09-01), Kato et al.
Wolf et al., "Silicon Processing for the VLSI Era", vol. 1, pp. 546-547 1986.
J. Haisma et al. (1994) "Improved Geometry of Double-Sided Polished Parallel Wafers Prepared for Direct Wafer Bonding". Applied Optics 33:7945-54.
Patent Abstracts of Japan vol. 4, No. 165, Nov. 15, 1980. Abstract of JP 55-113332.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466866