Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Patent
1997-01-28
1998-09-01
Nguyen, Nam
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
216 90, 438692, B44C 122, C03C 1500
Patent
active
058007253
ABSTRACT:
A method of manufacturing semiconductor wafers includes a double side primary polishing step, a back side etching step and a single side mirror polishing step. This method is capable of easy sensor detection of the front and back sides of the wafer, wafer processing of higher flatness level by forming etched rough surface at the back side of the double side polished wafer and setting up of wafer manufacturing process including a double side polishing step.
REFERENCES:
patent: 5071776 (1991-12-01), Matsushita et al.
patent: 5424224 (1995-06-01), Allen et al.
Kato Tadahiro
Kudo Hideo
Masumura Hisashi
Goudreau George
Nguyen Nam
Shin-Etsu Handotai & Co., Ltd.
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