Method of manufacturing semiconductor wafer without mirror polis

Details Method of manufacturing semiconductor wafer without mirror polis Method of manufacturing semiconductor wafer without mirror polis

1997-08-18

2000-01-11

Niebling, John F.

Semiconductor device manufacturing: process

Semiconductor substrate dicing

438692, 438693, 438974, 438959, 438928, H01L 21301, H01L 2146, H01L 2178

Patent

active

060135646

ABSTRACT:
In a method of manufacturing a semiconductor substrate, a first stage semiconductor substrate wafer is cut out from an ingot. Then, a chemical mechanical polishing process is performed to the first stage semiconductor substrate wafer to produce a second stage semiconductor substrate wafer respectively having mirror surfaces on front and rear surfaces of the second stage semiconductor substrate wafer. Subsequently, a third stage semiconductor substrate wafer is produced from the second stage semiconductor substrate wafer without performing an additional chemical mechanical polishing process, to have a blocking film on the rear surface and a mirror surface on the front surface. Finally, an epitaxial layer is grown on the front surface of the third stage semiconductor substrate wafer.

REFERENCES:
patent: 3511727 (1970-05-01), Hays
patent: 4398410 (1983-08-01), Nakajima et al.
patent: 5489557 (1996-02-01), Jolley et al.

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