Method of manufacturing semiconductor wafer and susceptor...

Details Method of manufacturing semiconductor wafer and susceptor... Method of manufacturing semiconductor wafer and susceptor...

2005-05-10

2005-05-10

Pert, Evan (Department: 2829)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C438S795000

Reexamination Certificate

active

06890383

ABSTRACT:
A semiconductor wafer manufacturing method comprising mounting a single crystal silicon wafer (W) in a pocket (11) arranged in a susceptor (10), and performing heat treatment for the single crystal silicon wafer (W) to manufacture a semiconductor wafer, wherein a contact ratio of the pocket (11) with the single crystal silicon wafer (W) is set to 0.1% or more and 1.1% or less.

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