Method of manufacturing semiconductor wafer and method of...

Details Method of manufacturing semiconductor wafer and method of... Method of manufacturing semiconductor wafer and method of...

2007-04-17

2007-04-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S106000, C438S691000, C438S725000, C438S745000

Reexamination Certificate

active

11203097

ABSTRACT:
According to a method of manufacturing a semiconductor wafer and a semiconductor device, a rear surface of the semiconductor wafer is ground, and is dry- or wet-etched so that rear surfaces of semiconductor chips on the segmented semiconductor wafer have substantially equal surface roughness. The semiconductor chips are bonded onto a lead frame via bumps using thermo-compression and ultrasonic vibrations.

REFERENCES:
patent: 5851845 (1998-12-01), Wood et al.
patent: 6506681 (2003-01-01), Grigg et al.
patent: 8-330880 (1996-12-01), None
Streetman, Solid State Electronic Devices, 1990, Prentice Hall, 3rd ed., p. 371.
Wolf, Silicon Processing for the VLSI Era, 1990, Lattice Press, vol. 2, pp. 222-223.
H. Yatsuda, et al., “Flip-Chip Assembly Technique for SAW Devices”, ISHM '95 Proceedings, pp. 365-370.

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