Method of manufacturing semiconductor substrate and method of ma

Details Method of manufacturing semiconductor substrate and method of ma Method of manufacturing semiconductor substrate and method of ma

1997-05-23

1999-09-21

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 57, 438 75, H01L 2100

Patent

active

059565705

ABSTRACT:
A method of manufacturing a semiconductor substrate includes according to the present invention a step of growing, when an epitaxial semiconductor substrate used for a solid-state imaging device is manufactured, an epitaxial layer on a substrate by using SiHCl.sub.3 as a source gas without HCl etching being effected on a substrate surface immediately before the epitaxial growth. A method of manufacturing a solid-state imaging device according to the present invention includes a step of growing an epitaxial layer on the substrate by using SiHCl.sub.3 as a source gas without HCl etching being effected on a substrate surface immediately before the epitaxial growth, and a step of forming a solid-state imaging element on the epitaxial layer of the epitaxial semiconductor substrate.

REFERENCES:
patent: 5261960 (1993-11-01), Ozias
patent: 5405803 (1995-04-01), Kusaka

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