Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-11-14
2009-06-02
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S426000
Reexamination Certificate
active
07541258
ABSTRACT:
A semiconductor is manufactured by forming a γ-aluminum oxide layer on a semiconductor substrate, forming a semiconductor layer on the γ-aluminum oxide layer, forming an exposed portion for exposing a part of the γ-aluminum oxide layer through the semiconductor layer, forming a support which is formed of a material having an etching rate smaller than that of the γ-aluminum oxide layer and which supports the semiconductor layer on the semiconductor substrate, forming a cavity between the semiconductor substrate and the semiconductor layer, forming a buried insulating layer in the cavity, forming a gate electrode on the semiconductor layer with a gate insulating layer therebetween and forming source/drain layers, which are disposed on both sides of the gate electrode, in the semiconductor layer.
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Brown Valerie
Nguyen Ha Tran T
Oliff & Berridg,e PLC
Seiko Epson Corporation
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