Method of manufacturing semiconductor substrate,...

Details Method of manufacturing semiconductor substrate,... Method of manufacturing semiconductor substrate,...

2005-02-08

2005-02-08

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Forming tapered edges on substrate or adjacent layers

C438S455000, C438S479000, C438S977000

Reexamination Certificate

active

06852653

ABSTRACT:
A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.

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