Method of manufacturing semiconductor structures by epitaxial gr

Details Method of manufacturing semiconductor structures by epitaxial gr Method of manufacturing semiconductor structures by epitaxial gr

1980-12-08

1982-12-28

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 156638, 156662, H01L 21208

Patent

active

043660096

ABSTRACT:
In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is cooled to a temperature from room temperature to 200.degree. C. During cooling, the structure's upper surface is contacted with a liquid gallium melt in such a manner that the doping elements present in the few remaining drops of the last growth melt not removed by the wiping off are dissolved.

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