Method of manufacturing semiconductor structures

Details Method of manufacturing semiconductor structures Method of manufacturing semiconductor structures

1992-01-22

1993-09-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, H01L 2120

Patent

active

052428575

ABSTRACT:
In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.

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