Method of manufacturing semiconductor non-volatile memory device

Details Method of manufacturing semiconductor non-volatile memory device Method of manufacturing semiconductor non-volatile memory device

1994-04-05

1996-07-02

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 45, 437979, H01L 218247

Patent

active

055321810

ABSTRACT:
According to this invention, a semiconductor non-volatile memory device includes a semiconductor substrate, insulating films formed on the semiconductor substrate and having at least two types of gate insulating films having different thicknesses and a first conductive film formed on the insulating films and electrically floating from the semiconductor substrate through the insulating films. These at least two types of gate insulating films include a first insulating film formed on said semiconductor substrate and a first diffusion layer of a conductivity type and a second insulating film formed on said semiconductor substrate and a second diffusion layer, of the opposite conductivity type, which is isolated from the first diffusion layer. The first conductive film is formed on the first and second insulating films. A part of the first insulating film between the first conductive film and the first diffusion layer is constituted by a third insulating film having a thickness smaller than that of the first insulating film.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4425631 (1984-01-01), Adam
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4823316 (1989-04-01), Riva
patent: 4851361 (1989-07-01), Schumann et al.
patent: 4870615 (1989-09-01), Maruyama et al.
patent: 4935790 (1990-06-01), Cappelletti et al.
patent: 5225700 (1993-07-01), Smayling
patent: 5324677 (1994-06-01), Ishii
Roger Cuppens et al., "An EEPROM for Microprocessors and Custom Logic", IEEE ISSCC Tech. Dig., p. 268, 1984.
Masataka Takebuchi et al., "A Novel Integration Technology of EEPROM Embedded CMOS Logic VLSI Suitable for ASIC Applications", IEEE CICC Proceedings, 1992.

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