Method of manufacturing semiconductor nanowires

Details Method of manufacturing semiconductor nanowires Method of manufacturing semiconductor nanowires

2006-09-29

2008-10-28

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C257S014000, C977S762000

Reexamination Certificate

active

07442575

ABSTRACT:
A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the graphite cloth using RF sputtering. The substrate structure is then exposed to dilute silane, resulting in a uniform coating of Si nanowires on the cloth. A method is also shown for growing calcified mineral phases on such nanowire surfaces as well as for the incorporation of anti-osteoporotic drugs or anti-bacterial agents onto the surface of the nanowires. Lastly, a method is shown for promoting the growth of bone-forming cells onto the nanowire materials by exposing specially treated nanowires to bone marrow cells.

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