Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-07-19
1998-10-27
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, H01L 2144
Patent
active
058277790
ABSTRACT:
A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step and a single side final mirror polishing step. The method having the double side mirror polishing step is capable of higher flatness level wafer processing, suppression of fine dust or particles, thereby to increase the yield of semiconductor devices, higher productivity due to simplification of processes, higher quality processing with lower manufacturing cost than conventional methods.
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Extended Abstracts, vol. 77, No. 34, May 1977, Princeton, N.J. pp. 452-453, E.L. Kern et al.
Applied Optics, vol. 33, No. 34, Dec. 1, 1994, Washington D.C., pp. 7945-7954, Haisma et al., "Improved Geometry of Double Sided . . .".
IBM Technical Disclosure Bulletin, vol. 25, No. 9, Feb, 1, 1983, p. 4761, E. Mendel et al., "Reduction of Grinding and Lapping Defects".
Kudo Hideo
Masumura Hisashi
Suzuki Kiyoshi
Berry Renee'R.
Bowers Jr. Charles L.
Shin-Etsu Handotai & Co., Ltd.
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