Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-12-26
1998-10-13
Niebling, John
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 216 91, H01L 21302
Patent
active
058211675
ABSTRACT:
A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step, a back side low brightness polishing step and a front side final mirror polishing step, wherein a silica containing polishing agent is used together with a polyolefin type fine particle material for the back side low brightness polishing. The method is capable of low brightness polishing of the back side, sensor detection of the front and back sides, suppression of generation of fine dust or particles from back side, thereby to increase the yield of semiconductor devices, manufacturing mirror wafers with higher flatness level, and higher productivity due to simplification of processes.
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"Improved Geometry of Double-sided Polished Parallel Wafers Prepared for Direct Wafer Bonding", Jan Haisma et al. (Philips Research Laboratories, Philips Electronics) Applied Optics, vol. 33 No. 34 (Dec. 1994) pp. 7945-7954.
Fukami Teruaki
Kudo Hideo
Masumura Hisashi
Suzuki Kiyoshi
Lebentritt Michael S.
Niebling John
Shin-Etsu Handotai & Co., Ltd.
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