Method of manufacturing semiconductor memory device having trenc

Details Method of manufacturing semiconductor memory device having trenc Method of manufacturing semiconductor memory device having trenc

1992-09-30

1993-12-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

052739287

ABSTRACT:
A method of manufacturing a semiconductor memory device having trench capacitors comprises steps of, forming a trench in a semiconductor substrate, forming a first insulation film on a surface of the semiconductor substrate over at least a whole surface of inner walls of the trench, forming a resist layer within the trench having the surface formed with the first insulation film, the resist layer being destined for use as a mask for etching, removing selectively a portion of the first insulation film by etching by using the resist layer as a mask for the etching, removing the resist layer from the interior of the trench and forming a semiconductor film of a predetermined thickness over the surface of the semiconductor substrate and the side wall surfaces of the trench from which the first insulation film has been removed, oxidating selectively a portion of the semiconductor film, and forming a second insulation film for element isolation in continuation to the first insulation film while allowing other portion of the semiconductor film within the trench which has not undergone the selective oxidation to be left as a lower electrode of the trench capacitor.

REFERENCES:
"Process Interaction for 64M DRAM using an Asymmetrical Stacked Trench Capacitor (AST) Cell" IEDM 90 pp. 647-650.
"A 4.2 um.sup.2 Half-Vcc Sheath Plate Capacitor DRAM Cell with Self-Aligned Buried Plate-Wiring" IEDM pp. 332-335.
Denshi Zairyo (Electronic Material) Jun. 1991, pp. 37-43.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor memory device having trenc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor memory device having trenc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor memory device having trenc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1542434