Method of manufacturing semiconductor memory device

Details Method of manufacturing semiconductor memory device Method of manufacturing semiconductor memory device

1997-12-05

1999-03-30

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2120

Patent

active

058888780

ABSTRACT:
A storage node electrode formed of doped amorphous silicon is provided on a silicon substrate. Silicon crystal grains are formed on the surface of the storage node electrode by annealing it in the atmosphere including PH.sub.3. A capacitor insulating film and a cell plate electrode are formed to cover the surface of the storage node electrode including silicon crystal grains. Larger silicon crystal grains are accordingly provided on the surface of the storage node electrode, resulting in increased capacitance of the capacitor.

REFERENCES:
patent: 4826779 (1989-05-01), Wright et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5623243 (1997-04-01), Watanabe et al.
Applied Physics, vol. 61, No. 11, pp. 1147-1151.

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