Method of manufacturing semiconductor light emitting device

Details Method of manufacturing semiconductor light emitting device Method of manufacturing semiconductor light emitting device

2006-12-08

2010-12-14

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S088000, C257S092000, C257S098000, C257SE23010, C257SE25013, C257SE27012, C257SE27128, C257SE31069, C257SE33047

Reexamination Certificate

active

07851810

ABSTRACT:
A semiconductor light emitting device includes a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate. An upper section of a ridge groove is formed by an anisotropic etching process, as a first groove in such a way as to have a depth from a surface of the multi-layered semiconductor layer and as not to cross the etching stop layer at the depth. A bottom groove of the ridge groove is formed by an isotropic etching process, as a second groove by performing etching in such a way as to be stopped by the etching stop layer.

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patent: 7208338 (2007-04-01), Chiba et al.

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