Electrical connectors – With selectable circuit – e.g. – plug board – Planar circuit overlying a second planar circuit – both...
Reexamination Certificate
2007-02-06
2007-02-06
Baumeister, B. William (Department: 2891)
Electrical connectors
With selectable circuit, e.g., plug board
Planar circuit overlying a second planar circuit, both...
C438S022000
Reexamination Certificate
active
11326509
ABSTRACT:
The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.
REFERENCES:
Nanostructure and carrier localization behaviors of green-luminscence InGaN/GaN quantum well structures of various silicon doping conditions, Applied Physics Letters, vol. 84, No. 14.
M. Crawford, Optical Spectroscopy of InGaN Epilayer in the low indium Compoisition Regime, MRS Internet Journal Nitride Semiconductor Research, vol. 5S1, 2000.
S. Chichibu et al., “Exciton Localization in InGaN Quantum Well Devices,” J.Vac. Sci. Technol., 1998, B 16(4), pp. 2204-2214.
A. Kaneta et al., “Discrimination of Local Radiative and Non-Radiative Recombination processes in an InGaN/GaN Single-Quantum-Well Structure By A Time-Resolved Multimode Scanning Near-Field Optical Microscopy ,”Applied Physics Letters, Oct. 2003, vol. 83, No. 17, pp. 3462-3464.
Ohno Akihito
Takemi Masayoshi
Tomita Nobuyuki
Baumeister B. William
Leydig , Voit & Mayer, Ltd.
Reames Matthew L.
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