Method of manufacturing semiconductor light emitting device...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S483000, C438S046000

Reexamination Certificate

active

06979581

ABSTRACT:
A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation.

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Feld et al, “In situ Optical Monitoring of AIAs Wet Oxiadation Using a Novel Low-Temperature Low-pressure Stream Furnace Design”, IEEE Photonics Technology Letters vo. 10, No. 2,Feb. 1998, pp 197-199.
Sakmoto et al, Fabrication Control during AIAs oxidationof the VCSELs via Optical probing Technique of AIAsLateral Oxiadation(OPTALO) Proceeding SPIE vol. 4649,(2002) pp 211-217.

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