Method of manufacturing semiconductor light-emitting device

Details Method of manufacturing semiconductor light-emitting device Method of manufacturing semiconductor light-emitting device

2011-05-24

2011-05-24

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C372S049010, C372S046010, C438S034000

Reexamination Certificate

active

07947517

ABSTRACT:
Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

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