Method of manufacturing semiconductor light emitting...

Details Method of manufacturing semiconductor light emitting... Method of manufacturing semiconductor light emitting...

2009-11-09

2011-12-06

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S022000, C257SE33005

Reexamination Certificate

active

08071408

ABSTRACT:
A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure.

REFERENCES:
patent: 2005/0156189 (2005-07-01), Deguchi et al.
patent: 2009/0294784 (2009-12-01), Nakahara et al.
patent: 2007-088404 (2007-04-01), None
patent: 2007-165409 (2007-06-01), None

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